E. Cartier, J.C. Tsang, et al.
Microelectronic Engineering
Paper
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
Abstract
The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal-oxide-semiconductor (MOS) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. This indicates that the density of interface states has been reduced to ∼10 11 eV-1 cm-2. The MOS capacitors are found to be stable in air after several months.
Related
M. Dragosavac, D.J. Paul, et al.
Semiconductor Science and Technology
Conference paper
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
S.H. Lo, D.A. Buchanan, et al.
VLSI Technology 1997