SUMMARY ABSTRACT: CHARACTERISTICS OF ORGANOSILICON POLYMERS IMMERSED IN GASEOUS PLASMAS.

Data are presented which show the effect of various plasmas upon the etch rate of a small sampling of organosilicon polymers. It is not intended to be definitive, but is intended to show general trends of the effect of structure upon the resistance of etching in these plasmas, and may give an insight into the mechanism by which these materials erode when exposed to various species produced in these plasmas. These polymers are of interest for multilayer lithography.