A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
The charge-buffered logic concept significantly reduces the dc power of bipolar logic, yet enables high-speed operation. Speed enhancements accomplished by improved PNP characteristics and by advancements in circuit design are discussed. Key design aspects and speed-enhancement techniques have been verified by experimental hardware. Despite conservative process parameters, a minimum delay time of 800 ps has been measured. Based on recently published advanced technologies, the potential of less than 300-ps gate delay at less than 10 mu W dc power has been projected.
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
L.K. Wang, Y. Taur, et al.
VLSI Technology 1985
S.K. Wiedmann, Tze Chiang Chen, et al.
IEEE Electron Device Letters
R.V. Joshi, L. Krusin-Elbaum, et al.
VLSI Technology 1985