P. Gueret, N. Blanc, et al.
Semiconductor Science and Technology
It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification. © 1969, The Institution of Electrical Engineers. All rights reserved.
P. Gueret, N. Blanc, et al.
Semiconductor Science and Technology
R.F. Broom, P. Gueret, et al.
ISSCC 1978
A.K. Geim, S.J. Bending, et al.
Applied Physics Letters
P. Gueret, U. Kaufmann, et al.
Electronics Letters