Tunnelling Through Very Low Barriers

P. Gueret; U. Kaufmann; E. Marclay

doi:10.1049/el:19850243

Electronics Letters

Paper

01 Jan 1985

Tunnelling Through Very Low Barriers

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Abstract

Tunnelling through very low barriers made with GaAs/Ga1-xAlxAs/GaAs heterostructures is investigated. The lowest barrier has a height of 40 meV and a thickness of about 450 A. Reasonable agreement between design parameters, measured data and theoretical values is obtained. © 1985, The Institution of Electrical Engineers. All rights reserved.

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Abstract

Related

Tunneling in YBCO/NbN and YBCO/Au junctions grown selectively on MgO substrates

Quasiclassical behavior of ballistic electrons in a perpendicular magnetic field

Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1-xAs/GaAs tunnel barriers

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