Fabia Farlin Athena, Nanbo Gong, et al.
IEEE T-ED
Conference paper
Solution for PCM and OTS intermixing on cross-point phase change memory
Abstract
A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after BEOL processing thermal treatment. Besides cycling endurance, performance degradation due to interlayer intermixing was observed. Optimal device operation and an improved buffer layer allowed drastically improved cycling endurance from a few cycles to > 1E9 cycles.
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