Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass GateZijian ZhaoSola Wooet al.2024ACS AMI
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM ApplicationsW. ChienE. Laiet al.2023IMW 2023
Endurance Evaluation on OTS-PCM Device using Constant Current Stress SchemeW. ChienLynne Gignacet al.2022IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint ProjectW. ChienLynne Gignacet al.2022EDTM 2022
Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigationRobert L. BruceSyed Ghazi Sarwatet al.2021IRPS 2021
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCMNanbo GongW. Chienet al.2020VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point MemoryHuai-Yu ChengI. Kuoet al.2020VLSI Technology 2020
On-Chip Trainable 1.4M 6T2R PCM Synaptic Array with 1.6K Stochastic LIF Neurons for Spiking RBMMasatoshi IshiiU. Shinet al.2019IEDM 2019
Comprehensive Scaling Study on 3D Cross-Point PCM toward 1Znm Node for SCM ApplicationsW. ChienH. Hoet al.2019VLSI Technology 2019