Publications

67 results for H. Lung

A Ge_xSe_1-x switch-only-memory technology through polarized atomic distribution
- - Zhi-Lun Liu
  - Alexander Grun
  - et al.
- 2024
- Scientific Reports
Low RESET Current Mushroom-Cell Phase-Change Memory Using Fiber-Textured Homostructure GeSbTe on Highly Oriented Seed Layer
- - Guy M. Cohen
  - Amlan Majumdar
  - et al.
- 2024
- physica status solidi RRL
A Novel Program-verify Free and Low Drift Multi-level Operation on Cross-point OTS-PCM for In-Memory Computing Application
- - W.C. Chien
  - C.L. Sung
  - et al.
- 2024
- IMW 2024
As-Se-Ge-S and Ge-N Heterostructures for Superior OTS Performance
- - A. Grun
  - Z.L. Lui
  - et al.
- 2024
- IMW 2024
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
- - W. Chien
  - E. Lai
  - et al.
- 2023
- IMW 2023
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low V_thDrift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
- - Huai-Yu Cheng
  - A. Grun
  - et al.
- 2022
- IEDM 2022
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
- - W. Chien
  - Lynne Gignac
  - et al.
- 2022
- IRPS 2022
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
- - W. Chien
  - Lynne Gignac
  - et al.
- 2022
- EDTM 2022
A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM
- - Nanbo Gong
  - W. Chien
  - et al.
- 2020
- VLSI Technology 2020
Si Incorporation Into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-point Memory
- - Huai-Yu Cheng
  - I. Kuo
  - et al.
- 2020
- VLSI Technology 2020