Conference paper
APCVD-grown self-aligned SiGe-base HBTs
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993
A 10.5 to 11-GHz fully-monolithic voltage-controlled oscillator circuit implemented in a standard SiGe bipolar technology is presented. An oscillator phase noise of -78 to -87 dBc/Hz is achieved at 100-kHz offset. The tuning range is close to 5% with an on-chip varactor-tuned resonator and for a control voltage of 0 to 3 V. The circuit draws less than 8 mA from a 3-V supply including the reference branch bias current.
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993
J.H. Comfort, G.L. Patton, et al.
IEDM 1990
H. Ainspan, C. Webster
Electronics Letters
D.L. Rogers, S. Walker, et al.
SPIE Photonics West 1995