Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Shubnikov-de Haas and persistent photoconductivity measurements are used to study the effect of hydrostatic pressure on the free electron concentration, mobility, and the occupancy of the DX centre in MBE grown n+GaAs heavily doped with either Si or Sn. The results show that the DX centre produces a resonant donor level between the Γ- and L- conduction band minima at a concentration comparable with the doping level. The position and occupancy of the DX centre are calculated using Fermi-Dirac statistics. For the Si-doped samples comparison with local vibrational mode measurements indicate that the DX level can be identified with SiGa. © 1988.
Imran Nasim, Melanie Weber
SCML 2024
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Eloisa Bentivegna
Big Data 2022
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001