Pressure-dependent measurements on n+ GaAs (Si, Sn): The effect of deep donor (DX) states on the electrical properties and persistent photoconductivity
- T. Foster
- D.K. Maude
- et al.
- 2006
- Physica Scripta
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Publications
6 results for J.C. Portal
DX centers in Sn-doped AlxGa1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- P.M. Mooney
- B.D. Parker
- et al.
- 1992
- Applied Physics Letters
PaperPressure-dependent studies of the DX centre in Si- and Sn-doped n+GaAs
- J.C. Portal
- D.K. Maude
- et al.
- 1988
- Superlattices and Microstructures
PaperGaSb-InAs-GaSb heterostructures studied under hydrostatic pressure
- J. Beerens
- G. Grégoris
- et al.
- 1987
- Physical Review B
PaperInvestigation of the DX center in heavily doped n-GaAs
- D.K. Maude
- J.C. Portal
- et al.
- 1987
- Physical Review Letters
PaperPressure-induced elimination of the hole gas in semimetallic GaSb-InAs-GaSb heterostructures
- J. Beerens
- G. Grégoris
- et al.
- 1987
- Physical Review B
Paper