J.A. Barker, D. Henderson, et al.
Molecular Physics
Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Related
E. Burstein
Ferroelectrics
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS