S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Related
J. Tersoff
Applied Surface Science
Ming L. Yu
Physical Review B
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures