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Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
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