Rapid thermal annealing induced order-disorder transition in Ga 0.52In0.48P/(Al0.35Ga0.65) 0.5In0.5P heterostructures
- Y. Hämisch
- R. Steffen
- et al.
- 1993
- Applied Physics Letters
Publications
4 results for P. Röntgen
Comparison of the sidewall recombination in dry and wet etched InGaAs/InP wires
- B. Jacobs
- H. Zull
- et al.
- 1993
- Microelectronic Engineering
Implantation induced order-disorder transition in ga0.52lno.48p/(alo.35gao.65)o.5lno.5p heterostructures
- York Hämisch
- Robert Steffen
- et al.
- 1993
- Japanese Journal of Applied Physics
Optical analysis of wet chemically etched InGaAs/InP wires
- B. Jacobs
- M. Emmerling
- et al.
- 1992
- Microelectronic Engineering