Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Paper
Nanolithography at 350 KV in a TEM
Abstract
The resolution of electron beam exposure of resist has been measured at an accelerating voltage of 350 kV using a modified high voltage transmission electron microscope. The equipment and aspects of its performance are described. The methods developed have been used to fabricate metal nanostructures with dimensions smaller than 10 nm. © 1989.
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