Mobility and CMOS devices/circuits on sub-10nm (110) ultra thin body SOI

For the first time, we show the experimental inversion mobility data on ultra thin (110) SOI substrates for thickness as thin as 6nm. Both electron and hole mobility in ultra thin (110) SOI are evaluated as a function of SOI thickness. In addition, novel processes such as (110) selective epitaxy and extremely thin cobalt disilicide CoSi 2 are developed. Ring oscillators and SRAM cell are demonstrated for the first time on 6nm (110) ultra thin SOI. When compared to ultra thin SOI in (100) substrate, we observe ∼33% drive current enhancement in PFETs at Lg=50nm and ∼1.8X hole mobility enhancement.