Paper

01 Jan 1985

Magnetotunneling in Al_xGa_1-xAs capacitors

View publication

Abstract

Observations of magnetic freezeout, sequential-single phonon emission, and the effect of Landau levels on tunneling in n-GaAs-undoped AlxGa1-xAs-n+GaAs capacitors are reviewed. © 1985.

Paper

Electrical measurements on n⁺-GaAs-undoped Ga _0.6Al_0.4 As-n-GaAs capacitors

P. Solomon, T.W. Hickmott, et al.

Applied Physics Letters

Paper

Stoichiometry and atomic defects in rf-sputtered SiO₂

T.W. Hickmott, J.E.E. Baglin

Journal of Applied Physics

Paper

Barrier heights at the polycrystalline silicon-SiO₂ interface

T.W. Hickmott, R.D. Isaac

Journal of Applied Physics

Paper

Defect centers in oxygen-deficient rf-sputtered SiO₂ films. I. Electron spin resonance

T.W. Hickmott

Journal of Applied Physics

View all publications