Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Two phenomena are observed for transverse magnetotunneling (B⊥J) from an accumulation layer in n- GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors. One effect is a strong dependence of tunnel currents, J, at high applied voltage and high current densities, on the angle between J and the magnetic field, B. The second effect is the observation of structure in tunnel currents for applied voltages between 0.15 V and 0.6 V which is interpreted to result from tunneling into Landau levels formed in the n+ GaAs electrode. © 1987.
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
K.A. Chao
Physical Review B
M. Hargrove, S.W. Crowder, et al.
IEDM 1998