Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Magnetotunneling from accumulation layers in AlxGa1-xAs capacitors
Abstract
Observations of magnetic freeze-out, sequential single-phonon emission, and the effect of Landau levels on tunneling from accumulation layers in n--GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors are reviewed. © 1986.
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