Integrated RF and microwave components in BiCMOS technology

This paper presents and discusses an approach to exploit conventional BiCMOS technology for monolithic integration of rf & microwave systems. Several components, which are important elements of rf & microwave circuit design and which arc not available in current BiCMOS, are described and characterized. The results for integrated spiral inductors in particular show that obvious limitations in comparison to compound semiconductor technology or hybrid configurations can be overcome to a large extent by utilizing the structural design options given with VLSI silicon integration technology. © 1996 IEEE.