Mirror fabrication for full-wafer laser technology
David J. Webb, M. Benedict, et al.
SPIE Optics, Electro-Optics, and Laser Applications in Science and Engineering 1991
A nonabsorbing etched mirror structure for AlGaAs single-quantum-well graded-refractive-index separate-confinement heterostructure ridge lasers is analyzed with respect to mirror coupling coefficient, threshold current penalty, and far-field pattern. Measurements of the mirror temperature showed a reduction from 50 to 20 K at 30 mW optical power depending on the degree of overlap of the optical intensity with the absorbing bent-waveguide profile. Pulsed catastrophic optical damage power levels up to 400 mW and a thermally saturated cw power of 165 mW with single-mode operation up to 80 mW have been achieved. Lifetime measurements at 40 mW constant optical power indicated degradation rates ≤10-5/h comparable to AlGaAs lasers with cleaved and coated mirrors.
David J. Webb, M. Benedict, et al.
SPIE Optics, Electro-Optics, and Laser Applications in Science and Engineering 1991
H. Seifert, R.P. Huebener, et al.
Physics Letters A
G.L. Bona, P. Buchmann, et al.
IEEE Photonics Technology Letters
P. Unger, V. Boegli, et al.
Microelectronic Engineering