GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- M.R. Melloch
- J. Woodall
- et al.
- 1993
- Materials Science and Engineering B
Paper
Publications
10 results for K. Mahalingam
Precipitation of arsenic in doped GaAs
- C.L. Chang
- K. Mahalingam
- et al.
- 1993
- Journal of Electronic Materials
PaperTwo-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
PaperComment on arsenic precipitate coarsening in GaAs epilayers
- M.R. Melloch
- K. Mahalingam
- et al.
- 1993
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
PaperArsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures
- K. Mahalingam
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
PaperArsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
PaperRole of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
PaperFormation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
PaperSubstrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
- K. Mahalingam
- N. Otsuka
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
PaperGaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth
Paper