Low-temperature grown III-V materials
- M.R. Melloch
- J. Woodall
- et al.
- 1995
- Annual Review of Materials Science
Publications
14 results for N. Otsuka
GaAs, AlGaAs, and InGaAs epilayers containing As clusters: Semimetal/semiconductor composites
- M.R. Melloch
- J. Woodall
- et al.
- 1993
- Materials Science and Engineering B
Precipitation of arsenic in doped GaAs
- C.L. Chang
- K. Mahalingam
- et al.
- 1993
- Journal of Electronic Materials
Two-dimensional arsenic-precipitate structures in GaAs
- M.R. Melloch
- C.L. Chang
- et al.
- 1993
- Journal of Crystal Growth
Comment on arsenic precipitate coarsening in GaAs epilayers
- M.R. Melloch
- K. Mahalingam
- et al.
- 1993
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures
- K. Mahalingam
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Arsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
Role of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters