INTERACTION BETWEEN Ti AND SiO//2.
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self-interstitials or vacancies, it is established that under equilibrium conditions at 1050°C Ge diffusion takes place by both substitutional- interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self-diffusion are correct, our findings support the idea that Si self-diffusion takes place by both interstitial and vacancy mechanisms.
C.-Y. Ting, M. Wittmer, et al.
VLSI Science and Technology 1983
R.V. Joshi, V. Prasad, et al.
Journal of Applied Physics
G. Northrop, D.J. Wolford, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989