PaperNovel diffusion phenomenon of dopants in silicon at low temperaturesM. Wittmer, P. Fahey, et al.Physical Review Letters
Conference paperSub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistorsJ.N. Burghartz, J.H. Comfort, et al.IEDM 1990
PaperCharacterization of reactively sputtered ruthenium dioxide for very large scale integrated metallizationL. Krusin-Elbaum, M. Wittmer, et al.Applied Physics Letters
PaperRedistribution of As during Pd2Si formation: Electrical measurementsM. Wittmer, C.-Y. Ting, et al.Journal of Applied Physics
