Publications

4 results at MRS Internet Journal of Nitride Semiconductor Research

Direct SIMS determination of the In_xGa_1-xN mole fraction
- - A.P. Kovarsky
  - Yu.L. Kretser
  - et al.
- 1998
- MRS Internet Journal of Nitride Semiconductor Research
Properties of InGaN deposited on glass at low temperature
- - Tilman Beierlein
  - S. Strite
  - et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
- - A. Pelzmann
  - S. Strite
  - et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N₂ overpressure
- - S. Strite
  - A. Pelzmann
  - et al.
- 1997
- MRS Internet Journal of Nitride Semiconductor Research