Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
This paper describes a technique to determine the presence and uniformity of Helium in the mask/wafer gap of x-ray lithography steppers by utilizing the oxygen sensitive resist polychlorostyrene (PSC). Results obtained at the IBM Advanced Lithography Facility using a SUSS stepper and the HELIOS superconducting synchrotron storage ring are presented. © 1995 Elsevier Science B.V. All rights reserved.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
P. Alnot, D.J. Auerbach, et al.
Surface Science
T.N. Morgan
Semiconductor Science and Technology