Conference paper
Channel doping impact on FinFETs for 22nm and beyond
Chung-Hsun Lin, R. Kambhampati, et al.
VLSI Technology 2012
Paper
Compact modeling of variation in FinFET SRAM cells
Abstract
Editor's note: FinFET technology is a possible solution to achieve a better power/performance trade-off for SRAM cells. This article provides a comprehensive analysis of the variations in FinFET devices, their impact on SRAM stability, and a statistical design procedure for FinFET SRAM cells. © 2010 IEEE.
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