S. Zirinsky, W.N. Hammer, et al.
Applied Physics Letters
This paper describes a technique for the continuous "on line" measurement of the spatial distribution of implanted ions. The method employs a multichannel analyzer to record the digitized integrated ion current and beam position and to generate a three-dimensional topographic display. The technique is applicable to apertured beams on mechanically rastered targets or to swept beams on stationary targets. The implant uniformity can be examined from either an isometric or a contour-type display on the multichannel analyzer or the data can be transferred to a digital computer for more sophisticated analysis. The uniformity can be examined prior to removal of the sample from the target chamber and "fill in" techniques employed to improve the uniformity.
S. Zirinsky, W.N. Hammer, et al.
Applied Physics Letters
Alwin E. Michel
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
J.C. Marinace, Alwin E. Michel, et al.
Proceedings of the IEEE
T.O. Sedgwick, Alwin E. Michel, et al.
Journal of Applied Physics