Experimental low temperature DRAM
W.H. Henkels, N.C.-C. Lu, et al.
VLSI Circuits 1989
We describe a 640-ps read access, 16-word by 64-b, three-port register file fabricated in 0.25-μm effective channel length CMOS technology. It features the capability to perform a write followed by a read in the same cycle at frequencies above 500 MHz. High speed is achieved by using a novel cell and array structure. Static circuit design is used exclusively throughout the entire register file and is optimized for high-speed operation. Measured results of the same-cycle read-after-write demonstrate register file operations at 625 MHz. Additionally, internal probe measurements of the read access path components are presented and compared with circuit simulations.
W.H. Henkels, N.C.-C. Lu, et al.
VLSI Circuits 1989
R. Brayton, Norman Brenner, et al.
ISCAS 1984
H. Heinrich, N. Pakdaman, et al.
LEOS 1992
R.L. Franch, S. Dhong, et al.
IEEE Journal of Solid-State Circuits