A 12-ns Low-Temperature DRAM

This paper presents a 12-ns access-time 0.5-Mbit CMOS DRAM operated at liquid nitrogen temperatures. Comprehensive measurements, featuring a low-temperature e-beam tester, focused on circuit concerns particularly relevant to high speed. The results, including the first reported measurements of SER at low temperatures, show that noise, power, and SER do not preclude very high-speed liquid-nitrogen DRAM operation. © 1989 IEEE