96 GHz static frequency divider in SiGe bipolar technology

Alexander Rylyakov; Thomas Zwick

doi:10.1109/gaas.2003.1252413

GaAs IC 2003

Conference paper

09 Nov 2003

96 GHz static frequency divider in SiGe bipolar technology

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Abstract

We report a static frequency divider designed in a 210 GHz fT, 0.13 μm SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.

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