Conference paper
3-D thermal modeling of FinFET
R.V. Joshi, José A. Pascual-Gutiérrez, et al.
ESSDERC 2005
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R.V. Joshi, José A. Pascual-Gutiérrez, et al.
ESSDERC 2005
B.T. Jonker, L.P. Fu, et al.
Journal of Applied Physics
Christophe R. Tretz, C.T. Chuang, et al.
IEEE International SOI Conference 1998
C.T. Chuang, R. Puri
DAC 1999