D.C. Pham, S. Asano, et al.
ISSCC 2005
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
D.C. Pham, S. Asano, et al.
ISSCC 2005
J. Warnock, J.D. Cressler, et al.
IEDM 1991
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
P.F. Lu, C.T. Chuang
CICC 1992