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A 1.9 ns/6.3 W/256 Kb bipolar SRAM design
Kai-Yap Toh, C.T. Chuang, et al.
Bipolar Circuits and Technology Meeting 1990
Conference paper
Ncon-quasi-static effects in advanced high-speed bipolar circuits
Abstract
A Gummel-Poon compatible non-quasi-static (NQS) model accounting for intrinsic carrier propagation delays is implemented in the ASTAP circuit simulator to evaluate the impact of non-quasi-static effects on the emitter-coupled-logic (ECL) circuit, non-threshold-logic (NTL) circuit, and various advanced bipolar circuits utilizing active-pull-down schemes. © 1992 IEEE.
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