A systematic study of temperature, polarity, thickness, and ramp rate dependencies of ramp-voltage stress for SiO2 and its comparison with 2D gate dielectrics
- Ernest Y Wu
- Richard G. Southwick
- et al.
- 2025
- IRPS 2025
Conference paper
Publications
5 results at IRPS 2025
Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling Trends
- Ernest Wu
- Paul Jamison
- et al.
- 2025
- IRPS 2025
Conference paperHot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices
- H. Zhou
- M. Hasanuzzaman
- et al.
- 2025
- IRPS 2025
Conference paperNew Loss Function for Learning Dielectric Thickness Distributions and Generative Modeling of Breakdown Lifetime
- Weiman Yan
- Ernest Wu
- et al.
- 2025
- IRPS 2025
Conference paperPotential Roles of 2D Materials in Future Interconnects and Reliability
- Baozhen Li
- 2025
- IRPS 2025
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