E. R.J. Edwards, Guohan Hu, et al.
IEDM 2020
As technology scales for density and performance, current Cu interconnect faces severe challenges with resistance, integration and reliability. Various efforts are made to extend Cu for future interconnect and to develop solutions beyond Cu. This review covers the recent progress of applying 2D materials 1) as barrier/liner and as capping layer (ESL) to improve line/via resistance with scaling and 2) as main conductor to replace Cu. Their integration and reliability challenges will also be discussed.
E. R.J. Edwards, Guohan Hu, et al.
IEDM 2020
Lin Dong, Steven Hung, et al.
VLSI Technology 2021
Katarzyna Hnida-Gut, Kirsten Moselund, et al.
NNW 2022
Akihiro Horibe, Yoichi Taira, et al.
IEDM 2025