Publications

11 results at IEDM 1989

A 27 GHz 20 ps PNP technology
- - J. Warnock
  - P.F. Lu
  - et al.
- 1989
- IEDM 1989
Are GaAs MOSFETs worth building? A model-based comparison of Si and GaAs n-MOSFETs
- - M.V. Fischetti
  - S.E. Laux
- 1989
- IEDM 1989
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- - P. Solomon
  - A. Palevski
  - et al.
- 1989
- IEDM 1989
A comparative study of hot-carrier instabilities in p- and n-type poly gate MOSFETs
- - C.C.-H. Hsu
  - D.S. Wen
  - et al.
- 1989
- IEDM 1989
A new planarization technique, using a combination of RIE and chemical mechanical polish (CMP)
- - B. Davari
  - C. Koburger
  - et al.
- 1989
- IEDM 1989
A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS
- - D.S. Wen
  - C.C.-H. Hsu
  - et al.
- 1989
- IEDM 1989
On the scaling property of trench isolation capacitance for advanced high-performance ECL circuits
- - C.T. Chuang
  - P.F. Lu
- 1989
- IEDM 1989
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- - L.K. Wang
  - D.S. Wen
  - et al.
- 1989
- IEDM 1989
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- - J.N. Burghartz
  - S. Mader
  - et al.
- 1989
- IEDM 1989
Monte Carlo simulation of non-equilibrium transport in ultra-thin base Si bipolar transistors
- - Wai Lee
  - S.E. Laux
  - et al.
- 1989
- IEDM 1989