Publications

15 results at IEDM 2008

32nm general purpose bulk CMOS technology for high performance applications at low voltage
- - F. Arnaud
  - J. Liu
  - et al.
- 2008
- IEDM 2008
Mechanisms of retention loss in Ge₂Sb₂Te ₅-based phase-change memory
- - Y.H. Shih
  - J.Y. Wu
  - et al.
- 2008
- IEDM 2008
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
- - R. Beach
  - T. Min
  - et al.
- 2008
- IEDM 2008
22 nm technology compatible fully functional 0.1 μm ² 6T-sram cell
- - B. Haran
  - A. Kumar
  - et al.
- 2008
- IEDM 2008
Analytical model for RESET operation of phase change memory
- - B. Rajendran
  - J. Karidis
  - et al.
- 2008
- IEDM 2008
MOSFET performance scaling: Limitations and future options
- - Dimitri A. Antoniadis
  - Ali Khakifirooz
- 2008
- IEDM 2008
A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding
- - F. Liu
  - R.R. Yu
  - et al.
- 2008
- IEDM 2008
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
- - B. Yang
  - R. Takalkar
  - et al.
- 2008
- IEDM 2008
Scaling of in_o.7ga_o.3as buried-channel MOSFETs
- - Yanning Sun
  - E.W. Kiewra
  - et al.
- 2008
- IEDM 2008
Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyond
- - H. Kawasaki
  - M. Khater
  - et al.
- 2008
- IEDM 2008