Simulation with animation: microscopic growth kinetics of Si(001) homoepitaxy
- M.R. Wilby
- M.W. Ricketts
- et al.
- 1991
- Journal of Crystal Growth
Paper
Publications
14468 results for Physical Sciences
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1-xP
- T.J. de Lyon
- N.I. Buchan
- et al.
- 1991
- Journal of Crystal Growth
PaperDopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE
- V.P. Kesan
- Subramanian S. Iyer
- et al.
- 1991
- Journal of Crystal Growth
PaperGaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
- M.R. Melloch
- K. Mahalingam
- et al.
- 1991
- Journal of Crystal Growth
PaperP-Type diluted magnetic III-V semiconductors
- H. Munekata
- H. Ohno
- et al.
- 1991
- Journal of Crystal Growth
PaperSi/SiGe heterostructures grown on SOI substrates by MBE for integrated optoelectronics
- V.P. Kesan
- P.G. May
- et al.
- 1991
- Journal of Crystal Growth
PaperPoly(aryl ether oxadiazoles)
- James L. Hedrick
- 1991
- Polymer Bulletin
PaperPair correlation effects in heavy fermions
- B. Jones
- 1991
- Physica B: Physics of Condensed Matter
PaperHigh-power, pulsed-microwave measurements of critical currents in thin films of Y-Ba-Cu-O and Nb
- N.S. Shiren
- R.B. Laibowitz
- et al.
- 1991
- Physical Review B
PaperMapping the fermi surface of graphite with a display-type photoelectron spectrometer
- A. Santoni
- L.J. Terminello
- et al.
- 1991
- Applied Physics A Solids and Surfaces
Paper