Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
- Tiezhong Ma
- Stephen A. Campbell
- et al.
- 2001
- IEEE Transactions on Electron Devices
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134 results at IEEE Transactions on Electron Devices
Improved low temperature characteristics of p-channel MOSFETs with Si 1-xGe x raised source and drain
- Hsiang-Jen Huang
- Kun-Ming Chen
- et al.
- 2001
- IEEE Transactions on Electron Devices
High-performance bottom electrode organic thin-film transistors
- Ioannis Kymissis
- C. Dimitrakopoulos
- et al.
- 2001
- IEEE Transactions on Electron Devices
Mosfet channel length: extraction and interpretation
- Yuan Taur
- 2000
- IEEE Transactions on Electron Devices
A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
- Qiqing Ouyang
- Xiangdong Chen
- et al.
- 2000
- IEEE Transactions on Electron Devices
High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
- Wu Lu
- Almaz Kuliev
- et al.
- 2000
- IEEE Transactions on Electron Devices
Fabrication and analysis of deep submicron strained-Si N-MOSFET's
- Kern Rim
- Judy L. Hoyt
- et al.
- 2000
- IEEE Transactions on Electron Devices
RF potential of a 0.18-μm CMOS logic device technology
- Joachim N. Burghartz
- Michael Hargrove
- et al.
- 2000
- IEEE Transactions on Electron Devices
MOSFET channel length: extraction and interpretation
- Y. Taur
- 2000
- IEEE Transactions on Electron Devices
Revisiting the analytic theory of p-n junction impedance: Improvements guided by computer simulation leading to a new equivalent circuit
- Steven E. Laux
- Karl Hess
- 1999
- IEEE Transactions on Electron Devices