Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- M.A. Tischler
- B.D. Parker
- et al.
- 1991
- Journal of Electronic Materials
Paper
Publications
118 results at Journal of Electronic Materials
Confirmation of large lattice relaxation of the DX center by extended photo-ionization cross-section measurements
- G. Northrop
- P.M. Mooney
- 1991
- Journal of Electronic Materials
PaperAnalysis of the vacancy-interstitial model of DX centers
- T.N. Morgan
- 1991
- Journal of Electronic Materials
PaperEffect of local alloy disorder on the emission kinetics of deep donors (DX centers) in AlxGa1-xAs
- P.M. Mooney
- T.N. Theis
- et al.
- 1991
- Journal of Electronic Materials
PaperBistability of the DX center in GaAs and AlxGa1-xAs, and experimental tests for negative U of the DX level
- T.N. Theis
- P.M. Mooney
- et al.
- 1991
- Journal of Electronic Materials
PaperThe mechanical behavior of silicon during small-scale indentation
- G.M. Pharr
- W.C. Oliver
- et al.
- 1990
- Journal of Electronic Materials
PaperRadiation damage and its effect on hot-carrier induced instability of 0.5 μm CMOS devices patterned using synchrotron x-ray lithography
- C.C.-H. Hsu
- L.K. Wang
- et al.
- 1990
- Journal of Electronic Materials
PaperPhotoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates
- H. Shen
- Fred H. Pollak
- et al.
- 1990
- Journal of Electronic Materials
PaperCarbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2
- N.I. Buchan
- T.F. Kuech
- et al.
- 1990
- Journal of Electronic Materials
PaperVelocity-field characteristics of electrons in doped GaAs
- W.Ted Masselink
- Thomas F. Kuech
- 1989
- Journal of Electronic Materials
Paper