InAs-Si nanowire heterojunction tunnel FETs
- Kirsten E. Moselund
- Heinz Schmid
- et al.
- 2012
- IEEE Electron Device Letters
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306 results at IEEE Electron Device Letters
Modeling and analysis of transistor mismatch due to variability in short-channel effect induced by random dopant fluctuation
- Nauman Z. Butt
- Jeffrey B. Johnson
- 2012
- IEEE Electron Device Letters
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
Effects of metal capping on thermal annealing of copper interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
Voltage ramp stress for hot-carrier screening of scaled CMOS devices
- A. Kerber
- W. McMahon
- et al.
- 2012
- IEEE Electron Device Letters
A comparison of short-channel control in planar bulk and fully depleted devices
- Ramachandran Muralidhar
- Jin Cai
- et al.
- 2012
- IEEE Electron Device Letters
In situ Co/SiC(N,H) capping layers for Cu/Low-k interconnects
- Chih-Chao Yang
- B. Li
- et al.
- 2012
- IEEE Electron Device Letters
Graphene-side-gate engineering
- Ching-Tzu Chen
- Tony Low
- et al.
- 2012
- IEEE Electron Device Letters
Observation of asymmetric magnetoconductance in strained 28-nm Si MOSFETs
- E.A. Gutiérrez-D.
- E. Póndigo-De Los A.
- et al.
- 2012
- IEEE Electron Device Letters
Transport-analysis-based 3-D TCAD capacitance extraction for sub-32-nm SRAM structures
- Ajay N. Bhoj
- Rajiv V. Joshi
- 2012
- IEEE Electron Device Letters