Examination of flatband and threshold voltage tuning of HfO2/TiN field effect transistors by dielectric cap layers
- S. Guha
- V.K. Paruchuri
- et al.
- 2007
- Applied Physics Letters
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2344 results at Applied Physics Letters
Fabrication of ultrathin magnetic structures by nanostencil lithography in dynamic mode
- L. Gross
- R.R. Schlittler
- et al.
- 2007
- Applied Physics Letters
Resonant energy transfer within a colloidal nanocrystal polymer host system
- Stefan Kaufmann
- Thilo Stöferle
- et al.
- 2007
- Applied Physics Letters
Atomic transport and integrity of Al2O3(2.0 nm)/HfO2(2.5 nm) gate stacks on Si
- L. Miotti
- R.P. Pezzi
- et al.
- 2007
- Applied Physics Letters
Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack
- C. Cabral Jr.
- K.N. Chen
- et al.
- 2007
- Applied Physics Letters
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
- K. Opsomer
- D. Deduytsche
- et al.
- 2007
- Applied Physics Letters
Nanometer-scale order in amorphous Ge2Sb2Te 5 analyzed by fluctuation electron microscopy
- Min-Ho Kwon
- Bong-Sub Lee
- et al.
- 2007
- Applied Physics Letters
Doping of germanium nanowires grown in presence of PH3
- E. Tutuc
- J.O. Chu
- et al.
- 2006
- Applied Physics Letters
Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
- G. Katsaros
- A. Rastelli
- et al.
- 2006
- Applied Physics Letters
Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
- P.D. Kirsch
- M.A. Quevedo-Lopez
- et al.
- 2006
- Applied Physics Letters