Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS with Interlayer Contacts
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- IEEE T-ED
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Extended Analysis of the Z2-FET: Operation as Capacitorless eDRAM
- Carlos Navarro
- Joris Lacord
- et al.
- 2017
- IEEE T-ED
First-Principles Investigations of TiGe/Ge Interface and Recipes to Reduce the Contact Resistance
- H. Dixit
- Chengyu Niu
- et al.
- 2017
- IEEE T-ED
High-Performance Carbon Nanotube Complementary Logic with End-Bonded Contacts
- Jianshi Tang
- Qing Cao
- et al.
- 2017
- IEEE T-ED
Training a Probabilistic Graphical Model with Resistive Switching Electronic Synapses
- Sukru Burc Eryilmaz
- Emre Neftci
- et al.
- 2016
- IEEE T-ED
A Phase Change Memory Cell With Metal Nitride Liner as a Resistance Stabilizer to Reduce Read Current Noise for MLC Optimization
- Sangbum Kim
- Norma Sosa
- et al.
- 2016
- IEEE T-ED
Substrate-voltage modulation of currents in symmetric SOI lateral bipolar transistors
- Jeng-Bang Yau
- Jin Cai
- et al.
- 2016
- IEEE T-ED
Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission
- Franco Stellari
- Keith A. Jenkins
- et al.
- 2016
- IEEE T-ED
The III-nitride double heterostructure revisited: Benefits for threshold voltage engineering of mis devices
- Herwig Hahn
- Carsten Funck
- et al.
- 2016
- IEEE T-ED
Ultrathin Body InGaAs MOSFETs on III-V-On-Insulator Integrated with Silicon Active Substrate (III-V-OIAS)
- Jianqiang Lin
- Lukas Czornomaz
- et al.
- 2016
- IEEE T-ED