GaAs1-xPx Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube SystemK.K. ShihJ.M. Blum1972JESPaper
Kinetics of Thermal Growth of Ultra-Thin Layers of SiO2 on Silicon Part II. TheoryR. GhezY. J. Van Der Meulen1972JESPaper
Thermodynamic Analysis of the III-V Alloy Semiconductor Phase Diagrams: III. The Solidus Boundary in the Ga1-xAlxAs Pseudobinary SystemL.M. FosterJ.E. Scardefieldet al.1972JESPaper
Application of Triangular Voltage Sweep Method to Mobile Charge Studies in MOS StructuresN.J. Chou1971JESPaper
Effect of Partial Dissolution During LPE Growth of AlxGa1-xAs on the Efficiency of Diffused Light-Emitting DiodesK.K. ShihJ.M. Blum1971JESPaper