Submicron mapping of silicon-on-insulator strain distributions induced by stressed liner structures
- Conal E. Murray
- K.L. Saenger
- et al.
- 2008
- Journal of Applied Physics
Paper
Publications
2360 results at Journal of Applied Physics
Growth and dissolution kinetics of III-V heterostructures formed by LPE. II. Comparison between thermodynamic and kinetic models
- M.B. Small
- R. Ghez
- 2008
- Journal of Applied Physics
PaperOptical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density
- J.W. Coburn
- M. Chen
- 2008
- Journal of Applied Physics
PaperX-ray photoelectron spectroscopy and Auger electron spectroscopy studies of glow discharge Si1-xCx:H films
- Wen-Yaung Lee
- 2008
- Journal of Applied Physics
PaperShallow junctions by high-dose As implants in Si: Experiments and modeling
- M.Y. Tsai
- F.F. Morehead
- et al.
- 2008
- Journal of Applied Physics
PaperHigh current injection into SiO2 from Si rich SiO2 films and experimental applications
- D.J. DiMaria
- D.W. Dong
- 2008
- Journal of Applied Physics
PaperApplication of Lindhard's dielectric theory to the stopping of ions in solids
- G.J. Iafrate
- J.F. Ziegler
- et al.
- 2008
- Journal of Applied Physics
PaperThe analysis of dislocations in strained III-V semiconductor crystals using elastobirefringence
- H. Booyens
- J.H. Basson
- 2008
- Journal of Applied Physics
PaperCalculation of changes in pattern dimensions to compensate for proximity effects in electron lithography
- Mihir Parikh
- 2008
- Journal of Applied Physics
PaperParallel silicide contacts
- I. Ohdomari
- K.N. Tu
- 2008
- Journal of Applied Physics
Paper