N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
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Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
- J. Knoch
- S. Mantl
- et al.
- 2005
- Solid-State Electronics
Qualification of 300 mm SOI CMOS substrate material: Readiness for development and manufacturing
- H.J. Hovel
- M. Almonte
- et al.
- 2004
- Solid-State Electronics
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- Solid-State Electronics
Power analysis of strained-Si devices/circuits
- Keunwoo Kim
- Rajiv V. Joshi
- et al.
- 2004
- Solid-State Electronics
Growth of single unit-cell superconducting La2-xSr xCuO4 films
- A. Rüfenacht
- P. Chappatte
- et al.
- 2003
- Solid-State Electronics
Si film electrical characterization in SOI substrates by the HgFET technique
- H.J. Hovel
- 2003
- Solid-State Electronics
Achieving the ballistic-limit current in Si MOSFETs
- Keunwoo Kim
- Jerry G. Fossum
- 2003
- Solid-State Electronics
Characterization of ultralow voltage, fully depleted silicon on insulator CMOS device and circuit technology
- Huiling Shang
- Marvin H White
- et al.
- 2002
- Solid-State Electronics
Design considerations for CMOS near the limits of scaling
- David J. Frank
- Yuan Taur
- 2002
- Solid-State Electronics