IIIa-2 Characterization of Electronic Gate Current in IGFETS Operating in the Linear and Saturation RegionsP.E. CottrellR.R. Troutmanet al.1977IEEE T-ED
Conditions for the Absence of Thermal Breakdown in Silicon NitrideNicholas KleinCarlton M. Osburn1977IEEE T-ED
The Importance of Insulator Properties in a Thin-Film Electroluminescent DeviceWebster E. Howard1977IEEE T-ED
I-8 Effect of Laser Radiation on Electroluminescence of Thin Film ZnS:Mn DevicesI.F. ChangP.Y. Yu1977IEEE T-ED
Efficiency Calculations for Thin-Film Polycrystalline Semiconductor Schottky Barrier Solar CellsC. LanzaH.J. Hovel1977IEEE T-ED