Conference paperA comparative study of NBTI as a function of Si substrate orientation and gate dielectrics (SiON and SiON/HfO 2)S. Zafar, M. Yang, et al.VLSI Technology 2005
PaperNon-linear source/drain effects in amorphous-silicon thin-film transistorsR.R. Troutman, Ashutosh KotwalIEEE T-ED
PaperSubmicrometer Si and Si-Ge Epitaxial-Bas Double-Poly Self-Aligned Bipolar TransistorsT.C. Chen, E. Ganin, et al.IEEE T-ED