Computer simulation of vacancy migration in a fcc tilt boundaryThomas KwokPaul S. Hoet al.1984Surface Science
Molecular beam studies of the dynamics of activated adsorption of N2 on W(110): Dissociation threshold and new binding statesJ. LeeR.J. Madixet al.1984Surface Science
Dependence of interface state density on the atomic roughness at the Si - SiO2 interfacePeter O. HahnS. Yokohamaet al.1984Surface Science