Ultimate EOT scaling (< 5Å) using Hf-based high-κ gate dielectrics and impact on carrier mobility
- Takashi Ando
- Martin M. Frank
- et al.
- 2010
- ECS Transactions
Conference paper
Publications
33 results at ECS Transactions
> 1020 cm-3 n-doping in Ge by Sb/P co-implants: n+/p Diodes with improved rectification
- Jeehwan Kim
- Stephen W. Bedell
- et al.
- 2010
- ECS Transactions
Conference paperMethodology of ALD HfO2 high-κ gate dielectric optimization by cyclic depositions and anneals
- H. Jagannathan
- Robert D. Clark
- et al.
- 2010
- ECS Transactions
Conference paperAre Si/SiGe tunneling field-effect transistors a good idea?
- Steven J. Koester
- Isaac Lauer
- et al.
- 2010
- ECS Transactions
Conference paperInteractions of metal-organic PEALD TaN with ultra-low k dielectric materials
- O. Van Der Straten
- H. Shobha
- et al.
- 2010
- ECS Transactions
Conference paperFabrication and properties of abrupt Si-Ge heterojunction nanowire structures
- Cheng-Yen Wen
- Mark C. Reuter
- et al.
- 2010
- ECS Transactions
Conference paperHigh performance and highly uniform metal hi-k gate-all-around silicon nanowire mosfets
- Jeffrey W. Sleight
- Sarunya Bangsaruntip
- et al.
- 2010
- ECS Transactions
Conference paperOptimizing band-edge high-κ/metal gate n-MOSFETs with ALD lanthanum oxide cap layers-oxidant and positioning effects
- Robert D. Clark
- H. Jagannathan
- et al.
- 2010
- ECS Transactions
Conference paperGraphene RF transistor performance
- Keith A. Jenkins
- Yu-Ming Lin
- et al.
- 2010
- ECS Transactions
Conference paperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAs
- Marinus Hopstaken
- Dirk Pfeiffer
- et al.
- 2010
- ECS Transactions
Conference paper